jiangsu changjiang ele ctronics technology co., ltd to -220f plastic-encapsulate transistors KSA614F transistor (pnp) fea ture y low frequency amplifier y medium speed switching maximum ratings (t a =25 unless other wise noted) symbol paramete r value unit v cbo collector-bas e voltage -80 v v ceo collector-emitter v oltage -55 v v ebo emitter-base vo ltage -5 v i c collector curr ent -continuous -3 a p c collector dissi pation 2 w t j junction temperature 150 t stg st orage temperature -55 to +150 electrical char acteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collecto r-base breakdown voltage v(br) cbo i c = -500a, i e =0 -80 v collecto r-emitter breakdown voltage v(br) ceo i c = -10ma , i b =0 -55 v emitter-ba se breakdown voltage v(br) ebo i e = -500a, i c =0 -5 v collecto r cut-off current i cbo v cb = -50 v, ie=0 -50 a emitter cut-off current i ebo v eb = -4v , i c =0 -50 a dc curr ent gain h fe v ce =-5v , i c = -5 00ma 40 240 collecto r-emitter saturation voltage v ce(sa t) i c = -1 a, i b = -1 00ma -0.5 v classific ation of hfe rank r o y range 40-80 70-140 120-240 to -220f 1. base 2. collector 3. emitte www.cj-elec.com 1 c , may ,201 6 1 3 2
www.cj-elec.com 2 c , may ,201 6 to-220f package outline dimensions min. ma x . min. max. a 4.300 4.700 0.169 0.185 a1 a2 2.800 3.200 0.110 0.126 a3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 d 9.960 10.360 0.392 0.408 e 14.800 15.200 0.583 0.598 e f h 0.000 0.300 0.000 0.012 h1 h2 l 28.000 28.400 1.102 1.118 l1 1.700 1.900 0.067 0.075 l2 0.900 1.100 0.035 0.043 2.700 ref. 3.500 ref. 0.138 ref. 0.106 ref. 0.800 ref. 0.500 ref. 0.031 ref. 0.020 ref. symbol dimensions in millimeters dimensions in inches 2.540 typ. 0.100 typ. 1.300 ref. 0.051 ref.
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